Role of surface morphology in wafer bonding
نویسندگان
چکیده
منابع مشابه
Morphology and bond strength of copper wafer bonding
The morphology and bond strength of copper-bonded wafer pairs prepared under different bonding/annealing temperatures and durations are presented. The interfacial morphology was examined by transmission electron microscopy (TEM) while the bond strength was examined from a diesaw test. Physical mechanisms explaining the different roles of post-bonding anneals at temperatures above and below 300°...
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There are numerous process integration schemes currently in place for the implementation of 3D-IC. Via first, via middle, via last along with back end of line (BEOL), front end of line (FEOL) and other variations of these approaches. This work will explore the role of wafer bonding, both permanent and temporary, in the fabrication of 3D-IC. Additionally, the materials and process flows used for...
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A theory is presented which describes the initial direct wafer bonding process. The effect of surface microroughness on the bondability is studied on the basis of the theory of contact and adhesion of elastic solids. An effective bonding energy, the maximum of which is the specific surface energy of adhesion, is proposed to describe the real binding energy of the bonding interface, including th...
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Wafer-to-wafer bonding processes for microstructure fabrication are categorized and described. These processes have an impact in packaging and structure design. Processes are categorized into direct bonds, anodic bonds, and bonds with intermediate layers. Representative devices using wafer-to-wafer bonding are presented. Processes and methods for characterization of a range of bonding methods a...
متن کاملHydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1991
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.347760